1 C4D05120E silicon carbide schottky diode z -r ec ? r ectifier features ? 1.2kv schottky rectifer ? zero reverse recovery current ? high-frequency operation ? temperature-independent switching behavior ? positive temperature coeffcient on v f benefts ? replace bipolar with unipolar rectifers ? essentially no switching losses ? higher effciency ? reduction of heat sink requirements ? parallel devices without thermal runaway applications ? switch mode power supplies ? solar inverters ? power factor correction ? led lighting power supplies ? ev charging and power conversion package to-252-2 part number package marking C4D05120E to-252-2 c4d05120 pin 1 pin 2 case maximum ratings (t c =25c unless otherwise specifed) symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 1200 v v rsm surge peak reverse voltage 1300 v v dc dc blocking voltage 1200 v i f continuous forward current 19 9 5 a t c =25?c t c =135?c t c =160?c i frm repetitive peak forward surge current 26 18 a t c =25?c, t p =10 ms, half sine pulse t c =110?c, t p =10 ms, half sine pulse i fsm non-repetitive peak forward surge current 46 36 a t c =25?c, t p =10 ms, half sine pulse t c =110?c, t p =10 ms, half sine pulse i f,max non-repetitive peak forward current 400 320 a t c =25?c, t p =10 m s, pulse t c =110?c, t p =10 m s, pulse p tot power dissipation 97 42 w t c =25?c t c =110?c t j operating junction range -55 to +175 ?c t stg storage temperature range -55 to +135 ?c v rrm = 1200 v i f ( t c =135?c) = 9 a q c = 27 nc C4D05120E rev. c
2 electrical characteristics symbol parameter typ. max. unit test conditions note v f forward voltage 1.4 1.9 1.8 3 v i f = 5 a t j =25c i f = 5 a t j =175c i r reverse current 20 40 150 300 a v r = 1200 v t j =25c v r = 1200 v t j =175c q c total capacitive charge 27 nc v r = 800 v, i f = 5a d i /d t = 200 a/s t j = 25c c total capacitance 390 27 20 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz v r = 800 v, t j = 25?c, f = 1 mhz note: 1. this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. unit r jc to-252 package thermal resistance from junction to case 1.55 c/w typical performance figure 1. forward characteristics 0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 figure 2. reverse characteristics 0 100 200 300 400 500 600 700 800 900 1000 0 500 1000 1500 2000 current (a) voltage (v) i f (a) v f (v) i r (a) v r (v) t j =-55c t j = 25c t j = 75c t j =125c t j =175c t j =-55c t j = 25c t j = 75c t j =125c t j =175c C4D05120E rev. c
3 figure 3. current derating 0 10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 175 30 35 40 45 50 55 60 65 0 5 10 15 20 25 25 50 75 100 125 150 175 typical performance 10% duty 20% duty 30% duty 50% duty 70% duty dc 0 50 100 150 200 250 300 350 400 450 0.01 0.1 1 10 100 1000 figure 4. power derating figure 5. recovery charge vs. reverse voltage figure 6. capacitance vs. reverse voltage i f(peak) (a) t c ?c p tot (w) t c ?c c (pf) v r (v) 0 5 10 15 20 25 30 35 0 200 400 600 800 1000 v r (v) qrr (nc) C4D05120E rev. c
4 6.0 8.0 10.0 12.0 14.0 capacitive energy (uj) 0.0 2.0 4.0 0 200 400 600 800 1000 e c capacitive energy (uj) v r reverse voltage (v) typical performance 100 1000 i fsm (a) 10 1.e-05 1.e-04 1.e-03 1.e-02 tp(s) 1000 100 0 figure 7. typical capacitance stored energy figure 8. non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) t p (s) i fsm (a) t j = 25c t j = 110c v r (v) 14 12 10 8 6 4 2 0 0 200 400 600 800 1000 e c ( m j) 1e-05 1e-04 1e-03 1e-02 figure 9. transient thermal impedance 100e-3 1 0.5 0.3 0.1 0.05 0.02 0.01 singlepulse 1e-3 10e-3 1e-6 10e-6 100e-6 1e-3 10e-3 100e-3 1 0.01 p t (sec) C4D05120E rev. c
5 recommended solder pad layout part number package marking C4D05120E to-252-2 c4d05120 to-252-2 package dimensions package to-252-2 note: recommended soldering profles can be found in the applications note here: http://www.cree.com/power_app_notes/soldering C4D05120E rev. c
6 6 t t t r if v vf * + = note: t j is diode junction temperature in degrees celsius r t = 0.08 + ( t j * 8.5*10 -4 ) v t = 0.96 + ( t j * - 1.22*10 -3 ) note: t j = diode junction temperature in degrees celsius , valid from 25c to 175c diode model C4D05120E rev. c copyright ? 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power ? rohs compliance the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2011/65/ec (rohs2), as implemented january 2, 2013. rohs declarations for this product can be obtained from your cree representative or from the product documentation sections of www.cree.com. ? reach compliance reach substances of high concern (svhcs) information is available for this product. since the european chemi - cal agency (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future,please contact a cree representative to insure you get the most up-to-date reach svhc declaration. reach banned substance information (reach article 67) is also available upon request. ? this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffc control systems. notes
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